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Proceedings Paper

Investigation Of Photoablation As A Patterning Technique For Silicon Based Integrated Circuits: Laser Ablation And Physical Damage Threshold Considerations
Author(s): D. L. Singleton; G. Paraskevopoulos; A. D. Buckthought; R. S. Irwin; G. S. Jolly; I.T. Ali Emesh
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Paper Abstract

Damage threshold energies for a pulsed XeCl excimer laser at 308nm have been obtained for a number of microelectronic materials which may have patterning applications. A photoacoustic technique is used to identify the damage process. An example of laser patterning illustrating the constraints on laser energy is given.

Paper Details

Date Published: 5 February 1990
PDF: 8 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963916
Show Author Affiliations
D. L. Singleton, National Research Council of Canada (Canada)
G. Paraskevopoulos, National Research Council of Canada (Canada)
A. D. Buckthought, National Research Council of Canada (Canada)
R. S. Irwin, National Research Council of Canada (Canada)
G. S. Jolly, Northern Telecom Electronics (Canada)
I.T. Ali Emesh, Northern Telecom Electronics (Canada)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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