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Proceedings Paper

IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance
Author(s): H. Shen; Z. Hang; Fred H. Pollak; K. Capuder; Peter E. Norris
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Paper Abstract

We have successfully applied the contactless, non-invasive electromodulation method of photoreflectance as an in-situ sensor of the OMVPE process. The direct gaps of GaAs and Ga1-xAlxAs(x = 0.17) have been measured as a function of temperature up to 690°C, in-situ, under actual OMVPE growth conditions, including a rotating substrate holder (~ 500 rev/min) and flowing gases.

Paper Details

Date Published: 5 February 1990
PDF: 9 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963914
Show Author Affiliations
H. Shen, University of New York (United States)
Z. Hang, University of New York (United States)
Fred H. Pollak, University of New York (United States)
K. Capuder, EMCORE Corporation (United States)
Peter E. Norris, EMCORE Corporation (United States)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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