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Proceedings Paper

High Precision Measurement Of Phosphorus In Thin Glass Films Using X-Ray Fluorescence
Author(s): Michael C. Madden; J. Neal Cox
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Paper Abstract

Use of sapphire substrates instead of silicon for measurement of phosphorus in BPSGs and PSGs can improve the precision of the phosphorus measurement from 3σ = 0.32 wt.% to 3o = 0.05 wt.%. Improvement in precision results from elimination of the background silicon counts, elimination of film thickness as a factor in phosphorus calculations, use of peak intensity ratios rather than absolute intensities, and elimination of wafer reloading effects.

Paper Details

Date Published: 5 February 1990
PDF: 5 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963913
Show Author Affiliations
Michael C. Madden, Intel Corporation (United States)
J. Neal Cox, Intel Corporation (United States)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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