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Proceedings Paper

High Resolution Linewidth Control In Optical Microlithography
Author(s): Catherine M. Ngo
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Paper Abstract

Stringent process and equipment control becomes significant in high resolution submicrometer optical lithography. The system resolution, linewidth control, step coverage, and minimum feature size are not only dependent on the resist process but also dependent on such factors as equipment stability, system calibration, mask design and fabrication, and alignment marks design. When contact mask aligners (contact printers) or projection printers (5x or 10x wafer steppers) are used, attention to equipment control and utilization is essential to achieve submicrometer patterning and allow the process to achieve high yield at these small critical dimensions.

Paper Details

Date Published: 20 August 1986
PDF: 8 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963723
Show Author Affiliations
Catherine M. Ngo, Hughes Research Laboratories (United States)


Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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