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Proceedings Paper

Planarization Profile Measurement Using A Confocal Scanning Laser Microscope
Author(s): Ian R. Smith; Simon D. Bennett; James T. Lindow; Kevin Monahan
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Paper Abstract

The use of planarizing layers to improve the performance of photolithography for micron and submicron devices is being actively explored by a number of semiconductor companies. The usefulness of the procedure depends critically upon the degree to which residual surface undulations can be controlled. This paper describes how a confocal scanning optical microscope may be used to measure surface profiles of planarizing layers and discusses the factors which influence the accuracy of measurement. Experimental measurements, using a SiScan-I system, of resist and P.S.G. planarizing layers are presented, demonstrating a sensitivity to surface height changes of 50 nm. The technique may be improved upon by careful design of the microscope and selection of the imaging wavelength. These factors are discussed.

Paper Details

Date Published: 20 August 1986
PDF: 11 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963721
Show Author Affiliations
Ian R. Smith, SiScan Systems (United States)
Simon D. Bennett, SiScan Systems (United States)
James T. Lindow, SiScan Systems (United States)
Kevin Monahan, Signetics Corporation (United States)


Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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