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Proceedings Paper

Aluminum Taper Etching Using Resist/a-Si/Al Structure
Author(s): Hiroshi Hoga; Masayoshi Kanaya; Sadao Suganuma
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Paper Abstract

Aluminum taper etching has been developed to improve dielectric step coverage. The seventy degree tapered aluminum pattern is obtained on a flat topography by erosion of a sloped resist mask and high etching anisotropy in RIE. To improve process stability and controllability, resist/a-Si(amorphous silicon)/Al structure was adopted. Amorphous silicon decreases the reflectivity to reduce pattern degradation and has lower etching rate to serve as a secondary etching mask. A simple etching model was proposed to evaluate taper etching controllability and limitation. SEM observations and TEG evaluations show a good dielectric step coverage on tapered aluminum pattern.

Paper Details

Date Published: 20 August 1986
PDF: 7 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963719
Show Author Affiliations
Hiroshi Hoga, Oki Electric Industry Co., Ltd. (Japan)
Masayoshi Kanaya, Oki Electric Industry Co., Ltd. (Japan)
Sadao Suganuma, Oki Electric Industry Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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