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Proceedings Paper

Controlling Etch Profiles: The Effect Of Controlling Ion Transport
Author(s): Frank C. See
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Paper Abstract

An additional degree of profile control is available when careful control over the parameter Vdc/p is exercised. This parameter may be used alone or in conjunction with photomask erosion, polymer forming chemistries, or other strategies used in varying vertical etch profiles. The effect is demonstrated by utilizing SF6 to etch oxide in an RIE plasma reactor.

Paper Details

Date Published: 20 August 1986
PDF: 2 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963718
Show Author Affiliations
Frank C. See, Micro-Rel Div. Of Medtronic. Inc. (United States)


Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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