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Proceedings Paper

A New Lens For Submicron Lithography And Its Consequences For Wafer Stepper Design
Author(s): J. Biesterbos; A. Bouwer; G. V. Engelen; G . V. D. Looij; J. V. D. Werf
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Paper Abstract

The imaging properties of a prototype from the new generation of i-line, high numerical aperture projection lenses have been investigated. The production resolution of this submicron lens is 0.7 micron at a depth of focus of +/- 1.5 microns. The diameter of the image field is 14.1 mm. The curvature of the focal plane is about 1.5 microns between a position at the optical axis and a position at the edge of the image field. The lens has been incorporated in a wafer stepper. Improvements which have been carried out in order to meet the submicron requirements from the side of the stepper are the accuracy of the wafer positioning (3 sigma = 50 nm) and of reticle-to-wafer alignment ( 3 sigma = 60 nm ). Systems for correcting for the influence of variations of the atmospheric pressure have been incorporated.

Paper Details

Date Published: 20 August 1986
PDF: 10 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963700
Show Author Affiliations
J. Biesterbos, Philips Research Laboratories (The Netherlands)
A. Bouwer, Philips Research Laboratories (The Netherlands)
G. V. Engelen, Philips Research Laboratories (The Netherlands)
G . V. D. Looij, Philips Research Laboratories (The Netherlands)
J. V. D. Werf, Philips Research Laboratories (The Netherlands)


Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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