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Proceedings Paper

Excimer Laser-Based Lithography: A Deep Ultraviolet Wafer Stepper
Author(s): Victor Pol; James H. Bennewitz; Gary C. Escher; Martin Feldman; Victor A. Firtion; Tanya E. Jewell; Bruce E. Wilcomb; James T. Clemens
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Paper Abstract

A deep UV projection system has been developed by modifying a commercial step and repeat exposure tool to operate at 248nm with an all-quartz lens and a KrF excimer laser. The lens is a 5X reduction lens with a minimum field size of 14.5 mm and a numerical aperture which is variable from 0.20 to 0.38. This produces a practical resolution of 0.5μm over the 14.5 mm field, with 0.4μm resolution achievable in a lab situation. Furthermore, by reducing the numerical aperture it is possible to print 0.8Am lines and spaces over a field larger than 14.5 mm with depth of focus greater than ±2μm. The data presented are results of extensive resolution studies as well as applications to real submicron devices. Some of the advantages and limitations of laser-based lithography are discussed, including possible directions for new laser development.

Paper Details

Date Published: 20 August 1986
PDF: 11 pages
Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963697
Show Author Affiliations
Victor Pol, AT&T Bell Laboratories (United States)
James H. Bennewitz, AT&T Bell Laboratories (United States)
Gary C. Escher, AT&T Bell Laboratories (United States)
Martin Feldman, AT&T Bell Laboratories (United States)
Victor A. Firtion, AT&T Bell Laboratories (United States)
Tanya E. Jewell, AT&T Bell Laboratories (United States)
Bruce E. Wilcomb, AT&T Bell Laboratories (United States)
James T. Clemens, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0633:
Optical Microlithography V
Harry L. Stover, Editor(s)

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