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Proceedings Paper

Fresnel Phase Effects For X-Ray Microlithography
Author(s): Renato Redaelli; Roman Tatchyn; Piero Pianetta
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Paper Abstract

A study of Fresnel diffraction effects is presented for structures of interest for X-Ray Microlithography. This analysis uses the full optical constants of the mask absorber pattern. Therefore, our calculations take into account the fact that the photons experience a phase shift as they go through the mask's absorbing layer in addition to simple absorption. Results are presented which show the consequences of adding the phase effects to the Fresnel analysis. These results show that phase effects cannot be disregarded in modeling Fresnel intensity profiles on resists.

Paper Details

Date Published: 30 June 1986
PDF: 6 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963694
Show Author Affiliations
Renato Redaelli, Stanford University (United States)
Roman Tatchyn, Stanford University (United States)
Piero Pianetta, Stanford University (United States)

Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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