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Proceedings Paper

Application Of Ghost Proximity Effect Correction Method To Conventional And Nonswelling Negative E-Beam Resists
Author(s): Huayu Liu; E. D. Liu
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Paper Abstract

The proximity effect in electron-beam lithography can be corrected by the "GHOST" method, in which an additional field exposure with defocused beam at lower dose is used to compensate proximity effect. This technique was applied to CMS-EX(R) and RD-2000N negative resist successfully. Excellent linewidth control was confirmed by an electrical test method. A parameter of development rate ratio was used to characterize the performance of nonswelling negative resist.

Paper Details

Date Published: 30 June 1986
PDF: 6 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963691
Show Author Affiliations
Huayu Liu, Hewlett Packard Laboratory (United States)
E. D. Liu, Hewlett Packard Laboratory (United States)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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