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Proceedings Paper

Scanning Electron Microscope (Sem) Dimensional Measurement Tool
Author(s): David P. Paul
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Paper Abstract

Requirements for measurement of very small integrated circuit (IC) device structures have become increasingly more demanding with the advent of electron beam, x-ray and advanced optical lithographic processes. High throughput, highly accurate and repeatable measurement tools are needed to guarantee dimensional control for device performance. This paper describes a dimensional measurement tool based on a Scanning Electron Microscope (SEM) which uses a fixed beam and scanning stage technique for gathering measurement data. This measurement tool is designed to make dimensional measurements of IC devices from 0.1 μm to 15 μm. Superior accuracies and precision are realized by eliminating dependence on calibration of the beam deflection as is required in digital scanning type tools. The deflection of the stage is measured by a laser interferometer which provides accurate traceability. Deflection versus secondary electron intensity profiles are gathered as scan lines. The scan lines are analyzed by the computer with an algorithm designed to detect the edges of the line according to particular sets of criteria set up uniquely for each line type. An important application of this tool is the capability to use the SEM electron beam to expose precisely spaced lines in photoresist with line widths as small as 0.1 μm and a pitch as small as 0.3 μm. These lines are excellent for use as calibration standards for other measurement operations.

Paper Details

Date Published: 30 June 1986
PDF: 10 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963688
Show Author Affiliations
David P. Paul, IBM General Technology Division (United States)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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