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Proceedings Paper

Sub-Micron Pattern Inspection System Using Electron Beam
Author(s): T. Kato; K. Saitoh; S. Takeuchi; K. Moriizumi; K. Shibayama
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Paper Abstract

The experimental Electron Beam Inspection System (EBIS) which is used for sub-micron patterns of VLSI circuits is developed and described here. This system is designed to investigate algorithms, which extract defects, and various characteristics to use the electron beam (EB). Following will be mentioned : the configuration of EBIS, description of hardwares and softwares, considerations about pattern alignment, and algorithm extracting defects using the EB.

Paper Details

Date Published: 30 June 1986
PDF: 9 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963686
Show Author Affiliations
T. Kato, Mitsubishi Electric Corporation (Japan)
K. Saitoh, Mitsubishi Electric Corporation (Japan)
S. Takeuchi, Mitsubishi Electric Corporation (Japan)
K. Moriizumi, Mitsubishi Electric Corporation (Japan)
K. Shibayama, Mitsubishi Electric Corporation (Japan)

Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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