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Proceedings Paper

Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe
Author(s): Yasuo Bamba; Eizo Miyauchi; Hiroshi Arimoto; Tetsuo Morita; Akira Takamori; Hisao Hashimoto
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Paper Abstract

Experiments on GaAs polycrystal formation for isolation were made by using a combined system of a focused-ion-beam implanter with molecular-beam-epitaxy equipment. We obtained 0.7-μm-wide micropolycrystals of an aspect ratio of 3.5 above 160-keV-Be-implanted (more than lx1015 cm-2) GaAs epilayers. Micropolycrystals exhibited almost planar form and high resistivity even with donor doping of 3.2x10l8 cm-3. Single crystal regions adjacent to the micropolycrystals had good crystal quality which was confirmed by microscopic Raman spectroscopy. This new technique of micropolycrystal formation is attractive for planar isolation processing of GaAs devices with novel structures.

Paper Details

Date Published: 30 June 1986
PDF: 7 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963684
Show Author Affiliations
Yasuo Bamba, Optoelectronics Joint Research Laboratory (Japan)
Eizo Miyauchi, Optoelectronics Joint Research Laboratory (Japan)
Hiroshi Arimoto, Optoelectronics Joint Research Laboratory (Japan)
Tetsuo Morita, Optoelectronics Joint Research Laboratory (Japan)
Akira Takamori, Optoelectronics Joint Research Laboratory (Japan)
Hisao Hashimoto, Optoelectronics Joint Research Laboratory (Japan)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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