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Proceedings Paper

X-Ray Mask Distortion: Process And Pattern Dependence
Author(s): Arnold W. Yanof; Douglas J. Resnick; Constance A. Jankoski; William A. Johnson
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Paper Abstract

X-Ray lithography is widely believed to occupy an important future lithographic niche in the vicinity of 0.5 micron and below."] It will be technically easier to achieve resolution and depth of focus with X-Ray than with optical steppers in this lithographic regime. It will be much less expensive to print large volume runners like Dynamic RAMs, microprocessors, or CODECs with X-Ray than with electron beam direct write. However, it is also recognized that distortion in the X-Ray mask membrane may be a major obstacle to the exploitation of this niche, because of the extraordinary registration requirements of submicron design rules.

Paper Details

Date Published: 30 June 1986
PDF: 15 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963676
Show Author Affiliations
Arnold W. Yanof, AT&T Bell Laboratories (United States)
Douglas J. Resnick, AT&T Bell Laboratories (United States)
Constance A. Jankoski, AT&T Bell Laboratories (United States)
William A. Johnson, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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