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Proceedings Paper

Micron Features In III-V Materials By Photoelectrochemical Etching Of Focused Ion Beam Induced Damage Patterns
Author(s): K. D Cummings; L. R. Harriott; G. c. Chi; F. W. Ostermayer
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Paper Abstract

A method of patterning n-type GaAs, InP, InGaAs and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused gallium ion beam (FIB) at low dose is de-scribed. The ion beam is used to produce damage in a desired pattern on the material. Subsequent PEC etching of the material reveals the ion induc5d featurs in relief. The procedure is highly sensitive, requiring a dose of only 5x109 ions/cm2 (about 1 ion every 1500Å) for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

Paper Details

Date Published: 30 June 1986
PDF: 4 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963673
Show Author Affiliations
K. D Cummings, AT&T Bell Laboratories (United States)
L. R. Harriott, AT&T Bell Laboratories (United States)
G. c. Chi, AT&T Bell Laboratories (United States)
F. W. Ostermayer, AT&T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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