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Proceedings Paper

The Nanofab-150-A Versatile New Focused-Ion-Beam System
Author(s): N.William Parker; William P. Robinson; Joseph M. Snyder
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Paper Abstract

MicroBeam developed a new focused-ion-beam system, the NanoFab-150, for the fabrication of submicron structures with fully integrated imaging and analysis capabilities for inspection and endpoint detection. The system can operate in a manual mode, but is fully automated to reduce operating costs and enhance application reproducibility. The ion probe for the NanoFab-150 is changeable from 50 nanometers to 500 nanometers, with voltages variable from 3 kV to 150 kV at current densities up to 5 A/cm2. Elec-tronic selection of specific ion species from alloy sources is possible using the system's mass filter. An automated dual loadlock allows for rapid sample throughput. The stage has x-y travel to accommodate 6-in. wafers or masks, with the capability to use laser inter-ferometric positioning. High speed cryopumping is used for both the optical chamber (housing the ion source, lenses, mass filter and deflectors) and the target chamber (housing the x-y-theta stage, position sensors and probe monitors). The target and optical chambers are differentially pumped, allowing pressure differences of several orders of magnitude. This feature allows the use of ion-assisted chemical vapor deposition and gas-enhanced sputter etching. The differential pumping maintains a very low pressure in the optical chamber, increasing source lifetimes. In microfabrication and other applications, the NanoFab-150 functions as a scanning ion microscope in imaging and analysis of nanometer structures. The system uses a channel electron multiplier (CEM) with operating modes for collecting secondary electrons and/or secondary ions. The integral high collection efficiency SIMS optics is used for process endpoint detection and can also provide high spatial resolution maps with isotopic sensitivity in gray scale or color. The system configuration, results of early performance testing, and goals for the final performance specifications are discussed.

Paper Details

Date Published: 30 June 1986
PDF: 9 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963671
Show Author Affiliations
N.William Parker, MicroBeam, Inc. (United States)
William P. Robinson, MicroBeam, Inc. (United States)
Joseph M. Snyder, MicroBeam, Inc. (United States)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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