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Proceedings Paper

Registration Mark Studying For High-Overlay-Accuracy Hybrid Lithography
Author(s): H. Nozue; H. Yamanaka; S. Hasegawa; Y. Iida
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Paper Abstract

Hybrid utilization of e-beam direct writing and optical reduction projection is a very effective way to adopt a high accuracy advantage in e-beam direct writing without sacrificing productivity. However, alignment marks suitable for hybrid lithography have not been extensively studied. The optical system has a certain amount of lens distortion, and it is desirable to fabricate registration marks optically. Vector-scanning e-beam is superior in writing speed and registration method flexibility to raster-scanning. The vector system uses negative resist in more exposure levels than positive resist in order to minimize the exposure area. Back-scattered electron signals and detection accuracy from optical registration marks, coated with negative resist, such as CMS, were studied experimentaly with a variable-shaped vector system. Results obtained were analyzed by comparison with Monte-Carlo simulation. Studied hybrid marks are convex and concave, tapered and non-tapered, 5pm and 10pm width marks. The experiment and simulation results indicate that the key factor in achieving high accuracy within ±0.06pm (36) was easily obtained by the optimal tapered 10μm wide mark for e-beam direct writing and optical reduction projection.

Paper Details

Date Published: 30 June 1986
PDF: 9 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963665
Show Author Affiliations
H. Nozue, NEC Corporation (Japan)
H. Yamanaka, NEC Corporation (Japan)
S. Hasegawa, NEC Corporation (Japan)
Y. Iida, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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