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Proceedings Paper

Practical Proximity Correction
Author(s): Bob Carlson; Dan Burbank
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Paper Abstract

The Proximity Effect which results from electron scattering can be corrected in a number of ways. The most rigorous methods use computed changes to the pattern data base and are very costly to perform on very large circuit patterns. Alternatives are presented which are more practical to implement. They are: 1) CAD corrections to the data base, 2) layout and design rules, 3) GHOSTING, 4) system set-up, 5) tri-level resist, and 6) optimum use of the resist contrast behavior.

Paper Details

Date Published: 30 June 1986
PDF: 3 pages
Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963662
Show Author Affiliations
Bob Carlson, Honeywell Solid State Electronics Division (United States)
Dan Burbank, Honeywell Solid State Electronics Division (United States)


Published in SPIE Proceedings Vol. 0632:
Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V
Phillip D. Blais, Editor(s)

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