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Proceedings Paper

Photochemical Image Enhancement (PIE)
Author(s): James R. Sheats; Michael M. O'Toole; John S. Hargreaves
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Paper Abstract

We describe an approach to submicron optical lithography that offers the potential, in conjunction with i-line lenses, to reach 0.5 microns using organic, spin-on materials. In this method, a resist layer is coated with a thin layer (0.5 μm or less) of photobleachable polymeric dye, which is sensitive to the imaging radiation while the resist is not. Image exposure creates a latent image in the dye, which is transferred into the resist by deep UV blanket exposure under conditions such that the dye is unreactive. The top layer (polymeric dye) is then removed and the resist developed. Computer simulations based on a 365nm, 0.42 N.A. imaging system predict a resolution of 0.50 pm with linewidth control of ±10% for ±10% exposure variations at 1 depth of field defocus, for all features types and sizes. There is no exposure penalty in this mechanism; the dose required to bleach the dyes is comparable to that for conventional positive resists.

Paper Details

Date Published: 9 July 1986
PDF: 9 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963638
Show Author Affiliations
James R. Sheats, Hewlett Packard Laboratories (United States)
Michael M. O'Toole, Hewlett Packard Laboratories (United States)
John S. Hargreaves, Hewlett Packard Laboratories (United States)


Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

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