Share Email Print
cover

Proceedings Paper

Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.
Author(s): Robert E. Williams; Stan Weaver; Ernest W. Balch; John C. Sardella
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The effect of several key process variables on the litho-graphic performance of Altilith CEM-420 was investigated. Linewidth control in the resist image was measured by etching the substrate and electrically probing the resulting polysilicon lines with a Prometrix LithoMap LM20 system. Scanning electron microscopy was also used for some of the linewidth measurements over topography. The CEM-420 process was most effective when used in conjunction with an optimized photoresist process. We investigated lowering the resist softbake temperature and/or increasing the developer concentration. In each case the CEM-420 process performed better with the original processing conditions. Increasing the thickness of the CEM-420 layer improved linewidth control whether expressed as the change in critical dimension with change in exposure dose or as the ability to image different feature sizes at a given exposure dose. CEM-420 dramatically improved linewidth control over topography. Exposure times increased by a factor of between two and three with CEM-420. The effect of increasing exposure time on wafer throughput was miffimal. CEM-420 provided improved resolution with sodium, potassium, and metal-ion-free developers. Proximity effects were reduced with CEM-420. Modeling studies agreed with the exper-imental results showing increased exposure latitude for small feature sizes, improved resist profiles, and a reduction in the effect of standing waves.

Paper Details

Date Published: 9 July 1986
PDF: 9 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963637
Show Author Affiliations
Robert E. Williams, General Electric Company (United States)
Stan Weaver, General Electric Company (United States)
Ernest W. Balch, General Electric Company (United States)
John C. Sardella, General Electric Company (United States)


Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

© SPIE. Terms of Use
Back to Top