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Proceedings Paper

Submicron Optical Lithography: Enhanced Resolution And Depth Of Focus Using Advanced Processing Materials And Process Optimization
Author(s): Michele Nuhn; Sungmuk Lee
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Paper Abstract

The system performance of the THE i-line 10X wafer stepper with the Zeiss prototype 0.315 NA lens has been reported in previous papers.1,2 This paper describes the enhanced optical properties achieved using advanced processing materials and process optimization. Theoretical verses actual resolution and depth of focus results will be presented using the following materials: Ciba Geigy i-line sensitive photoimagable polyimide, AZ52140 positive resist, Shipley S2400 and S1400 microposit resists and General Electric's contrast enhancement material 388. Submicron resolution was achieved using all of the aforementioned materials; 0.75 micron lines and spaces using Ciba Geigy photoimagable polyimide, 0.5 micron lines and spaces using AZ5214, S2400, and S1400 microposit resists, and 0.375 micron lines and spaces when GE contrast enhancement material 388 is used with positive photoresist. Modulation Transfer Curves (MTF) for the Zeiss 10 78 34 lens and the various resist films used will be constructed to explain these results. The theoretical depth of focus range was adhered to when using both positive resists and polyimide. Enhanced depth of focus was achieved using GE's contrast enhancement material 388 with the positive resists tested. The theoretical and actual image distortion effect at focus values outside the theoretical depth of focus range is examined and the impact of future lenses coupled with current process technologies will also be discussed.

Paper Details

Date Published: 9 July 1986
PDF: 14 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963635
Show Author Affiliations
Michele Nuhn, TRE Semiconductor Equipment Corporation (United States)
Sungmuk Lee, TRE Semiconductor Equipment Corporation (United States)


Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

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