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Proceedings Paper

Reconsideration Of Fundamental Processes And Molecular Design Principles For High Sensitivity Dry Developable X-Ray Resist
Author(s): Shuzo Hattori; Shinzo Morita; Masaru Hori; Hitomi Yamada
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Paper Abstract

Fundamental processes and molecular design principles for high sensitivity dry developable X-ray resist are discussed experimentally and theoretically. Three factors, i.e., high G (number of chemical effect per 100 eV photon), high N (number of monomer unit in which a single chemical effect causes developable modification of polymer property) and high μm (mass absorption coefficient of monomer) are considered for design of a high sensitivity resist. Small modification of polymer resulting in high contrast was tried by doping tin into polymer film in a capacitively coupled gas flow type plasma polymerization reactor. The oxygen reactive ion etching rate of the film was successfully varied from 1700 to 100 A/min by changing the atomic ratio of tin to carbon from 0 to 26 %. A general way to connect a chemical effect to a dry developable polymer modification is discussed.

Paper Details

Date Published: 9 July 1986
PDF: 10 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963631
Show Author Affiliations
Shuzo Hattori, Nagoya University (Japan)
Shinzo Morita, Meijo University (Japan)
Masaru Hori, Nagoya University (Japan)
Hitomi Yamada, Nagoya University (Japan)

Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

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