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Proceedings Paper

A 2-Layer Resist System Derived From Trimethylsilylstyrene
Author(s): S. A. MacDonald; R. D. Allen; N. J. Clecak; C. G. Willson; J. M.J. Frechet
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Paper Abstract

This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3,3'-diazidodiphenylsulfone.

Paper Details

Date Published: 9 July 1986
PDF: 6 pages
Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963622
Show Author Affiliations
S. A. MacDonald, IBM Almaden Research Center (United States)
R. D. Allen, IBM Almaden Research Center (United States)
N. J. Clecak, IBM Almaden Research Center (United States)
C. G. Willson, IBM Almaden Research Center (United States)
J. M.J. Frechet, University of Ottawa (Canada)


Published in SPIE Proceedings Vol. 0631:
Advances in Resist Technology and Processing III
C. Grant Willson, Editor(s)

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