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Proceedings Paper

High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy
Author(s): R. M. Ash; R. R. Bradley; N. W. Forbes
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Paper Abstract

LEDs have been fabricated by two routes using material grown by MOCVD in the GaAs/GaAlAs materials system. High internal quantum efficiencies have been achieved in both a simple junction isolated device and in a high specification proton isolated LED.

Paper Details

Date Published: 6 October 1986
PDF: 4 pages
Proc. SPIE 0630, Fibre Optics '86, (6 October 1986); doi: 10.1117/12.963603
Show Author Affiliations
R. M. Ash, Plessey Research (Caswell) Limited (United Kingdom)
R. R. Bradley, Plessey Research (Caswell) Limited (United Kingdom)
N. W. Forbes, Plessey Research (Caswell) Limited (United Kingdom)

Published in SPIE Proceedings Vol. 0630:
Fibre Optics '86
Lionel R. Baker, Editor(s)

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