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Proceedings Paper

Optical Waveguides In GaAlAs/GaAs And GalnAs/InP Multiquantum Well Structures
Author(s): B L Weiss; A C Wismayer; N J Whitehead; W P Gillin
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Paper Abstract

This paper reviews the process of implantation induced multiquantum-well (MQW) mixing in GaAlAs/GaAs and GalnAs/InP MQW structures. The effects of varying the implanted ion dose and the annealing temperature and time on the properties of the mixed material are described. The application of the process to the fabrication of disorder delineated stripe optical waveguides in GaAlAs/GaAs MQW structures using silicon implantation is also discussed.

Paper Details

Date Published: 5 January 1990
PDF: 4 pages
Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963359
Show Author Affiliations
B L Weiss, University of Surrey (United Kingdom)
A C Wismayer, University of Surrey (United Kingdom)
N J Whitehead, University of Surrey (United Kingdom)
W P Gillin, University of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 1177:
Integrated Optics and Optoelectronics
Leon McCaughan; Mark A. Mentzer; Song-Tsuen Peng; Henry J. Wojtunik; Ka Kha Wong, Editor(s)

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