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Proceedings Paper

Radiation-Induced Attenuation In Integrated Optical Materials
Author(s): B. D. Evans
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Paper Abstract

Three materials commonly employed in opto-electronic intregrated circuits were evaluated for radiation-induced optical attenuation in the range 300 nm to 3000 nm. These include optically clear epoxy and crystalline lithium niobate after Co-60 exposure and crystalline tellurium dioxide after mixed gamma/fast-neutron exposure. In all these materials, however, induced loss was restricted to shorter wavelengths; attenuation induced at the telecommnications windows near 850, 1300 and 1550 nm was <0.1 dB/cm.

Paper Details

Date Published: 5 January 1990
PDF: 7 pages
Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963344
Show Author Affiliations
B. D. Evans, Boeing Aerospace and Electronics (United States)

Published in SPIE Proceedings Vol. 1177:
Integrated Optics and Optoelectronics
Leon McCaughan; Mark A. Mentzer; Song-Tsuen Peng; Henry J. Wojtunik; Ka Kha Wong, Editor(s)

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