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Proceedings Paper

Optical Waveguiding In An Epitaxial Layer Of Silicon-Germanium Grown On Silicon
Author(s): Richard A. Soref; Fereydoon Namavar; Joseph P. Lorenzo
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Paper Abstract

Low-loss waveguiding at X = 1.3 µm has been observed in a partially strained, 10-µm thick, single-crystal layer of Ge0,1Si0.9 grown by chemical vapor deposition on a high-resistivity (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was less than 1.9 dB/cm. Device applications of GeSi waveguides are discussed.

Paper Details

Date Published: 5 January 1990
PDF: 11 pages
Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963332
Show Author Affiliations
Richard A. Soref, Rome Air Development Center (United States)
Fereydoon Namavar, Spire Corporation (United States)
Joseph P. Lorenzo, Rome Air Development Center (United States)

Published in SPIE Proceedings Vol. 1177:
Integrated Optics and Optoelectronics
Leon McCaughan; Mark A. Mentzer; Song-Tsuen Peng; Henry J. Wojtunik; Ka Kha Wong, Editor(s)

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