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Proceedings Paper

Relaxation of Optically Excited Gallium Arsenide Doping Superlattices
Author(s): M. S. Tobin; J. D. Bruno; C. A. Pennise
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Paper Abstract

Measurements are reported of the photovoltage decay across a selectively contacted GaAs doping superlattice as a function of time following cw and picosecond laser excitation. The photovoltage decay is measured under conditions where electrons and holes can recombine through an external circuit in parallel with internal recombination mechanisms. Measurements of the intensity dependence of the steady-state photovoltage are also reported.

Paper Details

Date Published: 5 January 1990
PDF: 6 pages
Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963328
Show Author Affiliations
M. S. Tobin, U.S. Army Laboratory Command (United States)
J. D. Bruno, U.S. Army Laboratory Command (United States)
C. A. Pennise, U.S. Army Laboratory Command (United States)


Published in SPIE Proceedings Vol. 1177:
Integrated Optics and Optoelectronics
Leon McCaughan; Mark A. Mentzer; Song-Tsuen Peng; Henry J. Wojtunik; Ka Kha Wong, Editor(s)

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