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Proceedings Paper

InGaAsP/InP Heterojunction Interface Lattice Mismatch Effect On LPE Crystal Quality
Author(s): Liu Yi-Chun; Xing Xu; Zhang Yue--Qing
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Paper Abstract

Using the methods of x-ray double crystal diffraction (DCD) and x-ray DCD topograph as well as photolumincence (n), InGaAsP/InP single heterojunction interface ( SHI) lattice mismatch Influcence on LPE crystal quality is studied. The experimental results indicate that this kind lattice mismatch will lead to impurity condensing, dislocations and defects as well as nonradiation recombination centers increasing in LPE InGaAsP epitax layer and induce composition gradient in the direction of crystal growth.

Paper Details

Date Published: 5 January 1990
PDF: 5 pages
Proc. SPIE 1177, Integrated Optics and Optoelectronics, (5 January 1990); doi: 10.1117/12.963327
Show Author Affiliations
Liu Yi-Chun, Northeast Normal University (China)
Xing Xu, Northeast Normal University (China)
Zhang Yue--Qing, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 1177:
Integrated Optics and Optoelectronics
Leon McCaughan; Mark A. Mentzer; Song-Tsuen Peng; Henry J. Wojtunik; Ka Kha Wong, Editor(s)

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