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Proceedings Paper

GaAs/AlAs Super Lattice Photocathodes
Author(s): Jon R. Howorth; John Roberts; Mike F. Robinson
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Paper Abstract

The design of Gallium Arsenide photocathodes has remained almost static since the pioneering work of Antypas et al in 1973/74(1). This is partly because the GaAs photocathode development has been driven by military requirements, and once production has started, the design is frozen to enable products to be standardised. Recent developments in metal organic chemical vapour deposition (MOVPE) enable new cathode structures to be designed. In our case, we are concerned to produce a photocathode with high quantum efficiency over a wide spectral band, to enable us to build photomultipliers and image intensifiers for general scientific applications. This paper describes some of the cathode structures which have been grown at Sheffield University and Epi Materials Ltd. The paper gives data on morphology, photoluminescence and other material parameters. The paper also gives some of the early data on the photo sensitivity and spectral response together with an overview of some of the devices that can be made with these photocathodes.

Paper Details

Date Published: 22 December 1989
PDF: 8 pages
Proc. SPIE 1161, New Methods in Microscopy and Low Light Imaging, (22 December 1989); doi: 10.1117/12.962698
Show Author Affiliations
Jon R. Howorth, Instrument Technology Ltd (United Kingdom)
John Roberts, Sheffield University (United Kingdom)
Mike F. Robinson, Epi Materials (United Kingdom)


Published in SPIE Proceedings Vol. 1161:
New Methods in Microscopy and Low Light Imaging
John E. Wampler, Editor(s)

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