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Proceedings Paper

Silicon CCD Optimized For Near Infrared (NIR) Wavelengths
Author(s): Gary R. Sims; Fabiola Griffin; Michael P. Lesser
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Paper Abstract

Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

Paper Details

Date Published: 22 December 1989
PDF: 6 pages
Proc. SPIE 1161, New Methods in Microscopy and Low Light Imaging, (22 December 1989); doi: 10.1117/12.962688
Show Author Affiliations
Gary R. Sims, Photometrics Ltd. (United States)
Fabiola Griffin, Photometrics Ltd. (United States)
Michael P. Lesser, University of Arizona (United States)


Published in SPIE Proceedings Vol. 1161:
New Methods in Microscopy and Low Light Imaging
John E. Wampler, Editor(s)

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