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Proceedings Paper

Induced Optical Reflectivity By Local Variation Of Conductivity In Metal-Insulator-Semiconductor Structures
Author(s): Thad J. Englert
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Paper Abstract

Calculations based on theoretical models of metal-insulator- semiconductor structures show that moderate applied potentials may cause sufficiently large induced inversion charge carrier densities at the semiconductor surface to yield reflectivities approaching 100 percent at the insulator-semiconductor interface. Using p-type silicon as the semiconductor material, positive gate potentials up to 10 volts applied to the metal predict reflectivities from approximately 15 percent to nearly 100 percent. The dependence of doping concentration, insulator thickness and gate voltage are shown.

Paper Details

Date Published: 5 February 1990
PDF: 7 pages
Proc. SPIE 1151, Optical Information Processing Systems and Architectures, (5 February 1990); doi: 10.1117/12.962257
Show Author Affiliations
Thad J. Englert, University of Wyoming (United States)

Published in SPIE Proceedings Vol. 1151:
Optical Information Processing Systems and Architectures
Bahram Javidi, Editor(s)

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