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Proceedings Paper

Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering
Author(s): Guanghua Chen; Jinzhang Xu; Fangqing Zhang
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Paper Abstract

We have achieved the high quality hydrogenated amorphous silicon-germanium (a-SiGe:H) films with high photo-conductivity (σph=10-4S/cm, under AM-1) and high photo-sensitivity (σphd=104) by reactive sputtering. In this paper, we present also the electron spin resonance(ESR)-studies of defects are attributed to Si- and Ge-like dangling bonds of a-SiGe:H films.

Paper Details

Date Published: 12 December 1989
PDF: 4 pages
Proc. SPIE 1149, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII, (12 December 1989); doi: 10.1117/12.962175
Show Author Affiliations
Guanghua Chen, Lanzhou University (China)
Jinzhang Xu, Lanzhou University (China)
Fangqing Zhang, Lanzhou University (China)


Published in SPIE Proceedings Vol. 1149:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII
Claes-Goeran Granqvist; Carl M. Lampert, Editor(s)

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