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Proceedings Paper

Multilayered Structure Of Silicon Oxinitrides And Oxides For Radiative Cooling Devices
Author(s): M. D. Diatezua; A. Dereux; J. P. Vigneron; Ph. Lambin; R. Caudano
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Paper Abstract

Multilayered structures were prepared by growing SiOxNy and SiOx films upon Al substrates. Different stoichiometries of the oxinitride layers were obtained by a reactive R.F sputtering technique. The infra-red reflectance experiments show that such multilayered structures should be better adapted for application to radiative cooling devices than single layers made with the same materials. This is explained by the presence of strongly absorbing radiative surface and interface modes which appear in the Reststrahlen frequencies because of the multilayered geometry. We performed ATR experiments so as to detect the presence of these modes and to demonstrate their correlation with the reflectance spectra.

Paper Details

Date Published: 12 December 1989
PDF: 8 pages
Proc. SPIE 1149, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII, (12 December 1989); doi: 10.1117/12.962169
Show Author Affiliations
M. D. Diatezua, Laboratoire Interdisciplinaire de Spectroscopie Electronique (Belgium)
A. Dereux, Laboratoire de Physique du Solide (Belgium)
J. P. Vigneron, Laboratoire de Physique du Solide (Belgium)
Ph. Lambin, Laboratoire de Physique du Solide (Belgium)
R. Caudano, Laboratoire Interdisciplinaire de Spectroscopie Electronique (Belgium)


Published in SPIE Proceedings Vol. 1149:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII
Claes-Goeran Granqvist; Carl M. Lampert, Editor(s)

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