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Proceedings Paper

Exciton Ionization Of InGaAs Quantum Wells
Author(s): I. Bar-Joseph; M. Wegener; T. Y. Chang; D. S. Chemla
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Paper Abstract

We investigate the exciton ionization process in InGaAs quantum wells using 100 fs time resolved spectroscopy. The ionization time is studied as a function of temperature. We find a room temperature ionization time of ≈200 fs and longer times at lower temperatures. At room temperature the ionization is dominated by collisions with LO phonons, whereas at lower temperatures another, extrinsic mechanism becomes increasingly important.

Paper Details

Date Published: 4 January 1990
PDF: 6 pages
Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); doi: 10.1117/12.962151
Show Author Affiliations
I. Bar-Joseph, Weizmann Institute of Science (Israel)
M. Wegener, AT&T Bell Laboratories (United States)
T. Y. Chang, AT&T Bell Laboratories (United States)
D. S. Chemla, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1148:
Nonlinear Optical Properties of Materials
Howard R. Schlossberg; Raymond V. Wick, Editor(s)

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