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Proceedings Paper

Effects Of Applied Voltage On Holographic Storage In SBN:60
Author(s): Joseph E. Ford; Yoshinao Taketomi; Sing H. Lee; Daniel Bize; R. R. Neurgaonkar; Shaya Fainman
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Paper Abstract

We characterize the holographic storage characteristics of photorefractive SBN:60 (Sr0.6Ba0.4Nb2O6) under an externally applied electric field. The field dependence of the recording response time and sensitivity, gain coefficient, steady-state diffraction efficiency, and erasing response time were measured. Kukhtarev's band transport model is shown to predict the asymmetric erase time / write time behavior of SBN:60. Using these results, we estimate as a function of applied field the number of equal diffraction efficiency holograms which can be superimposed in the crystal.

Paper Details

Date Published: 4 January 1990
PDF: 13 pages
Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); doi: 10.1117/12.962139
Show Author Affiliations
Joseph E. Ford, University of California San Diego (France)
Yoshinao Taketomi, University of California San Diego (United States)
Sing H. Lee, University of California San Diego (United States)
Daniel Bize, Centre d'Etudes et de Recherches de Toulouse (France)
R. R. Neurgaonkar, Rockwell International Science Center (United States)
Shaya Fainman, University of Michigan (United States)


Published in SPIE Proceedings Vol. 1148:
Nonlinear Optical Properties of Materials
Howard R. Schlossberg; Raymond V. Wick, Editor(s)

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