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Proceedings Paper

Radiation Effects On InP-Based Electrical & Optical Devices
Author(s): K. N. Vu; J. Y. Yaung
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Paper Abstract

Radiation effects on InP-based electrical and optical devices are discussed from the standpoint of device structure and physics. The devices addressed are High Electron Mobility Transistor (HEMT), Heterojunction Bipolar Transistor (HBT), and solar cells. Radiation effects due to neutrons, gamma rays, electrons, protons, x rays, and total dose radiation can result in device parameter degradation, upset, burnout, and current leakage problems. The effects are correlated to device structure and material properties. Comparisons are made to GaAs or Si devices that have performance characteristics similar to the above-mentioned InP devices. Finally, recommendations are made for testing and modeling these effects.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962053
Show Author Affiliations
K. N. Vu, TRW/DSG (United States)
J. Y. Yaung, TRW/DSG (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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