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Proceedings Paper

Monte Carlo Simulation Of A Submicron Pseudomorphic GaA1As/InGaAs/GaAs HEMT
Author(s): Duke H. Park; Kevin F. Brennan
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Paper Abstract

We present a first principles theoretical analysis of the performance of a 0.35 μn Al0.15 Ga0.85 As/InO.15Ga0.85As pseudomorphic high electron mobility transistor (HEMT) based on an ensemble Monte Carlo simulation coupled with a two-dimensional Poisson solver. The model contains the full details of the two-dimensional electron gas, nonstationary transport, i.e. ballistic transport and velocity overshoot, real space transfer, and the effects of the two-dimensional electric field profile. In order to ensure the reliability of the model, it is carefully tested throughout each stage of its development to experimental data or other independent calculations. Finally, the model calculations are compared to experimental measurements for a comparable device, Excellent agreement between the calculated and experimentally measured current-voltage characteristic is found. From an analysis of the underlying transport physics, the high speed performance of the pseudomorphic HEMT is found to arise from the superior electron confinement properties within the channel layer.

Paper Details

Date Published: 28 November 1989
PDF: 9 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962050
Show Author Affiliations
Duke H. Park, Georgia Institute of Technology (United States)
Kevin F. Brennan, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
Louis J. Messick; Rajendra Singh, Editor(s)

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