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Proceedings Paper

Physics Of InP/InGaAs Heterostructure Bipolar Transistors For EHF Applications
Author(s): M. Meyyappan; M. A. Osman; G. A. Andrews; J. P. Kreskovsky; H. L. Grubin
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Paper Abstract

A detailed examination of the physics of the InP based heterostructure bipolar transistors is reported. The governing drift and diffusion and Poisson's equations are solved numerically in two dimensions. The results show current gain as high as 26300 and an fT of 78.6 GHz for an InP/InGa As/InP double heterostructure. The electric field profiles from the simulation are used in an adjunct Monte Carlo procedure to assess the effects of velocity overshoot. The Monte Carlo results indicate a substantial reduction in base and collector transit times from the corresponding drift and diffusion equation (DDE) simulations.

Paper Details

Date Published: 28 November 1989
PDF: 8 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962049
Show Author Affiliations
M. Meyyappan, Scientific Research Associates, Inc (United States)
M. A. Osman, Scientific Research Associates, Inc (United States)
G. A. Andrews, Scientific Research Associates, Inc (United States)
J. P. Kreskovsky, Scientific Research Associates, Inc (United States)
H. L. Grubin, Scientific Research Associates, Inc (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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