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Proceedings Paper

Indium Phosphide-Based Heterojunction Bipolar Transistors.
Author(s): Jean-Luc Pelouard; Michael A. Littlejohn
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Paper Abstract

The Heterojunction Bipolar Transistor (HBT) is not a new device. In the late 1940's W. Shockley1 gave the basic ideas and, about ten years later, H. Kroemer2 published the first paper to show the promising advantages of this new structure. The first device applications have been demonstrated in AlGaAs/GaAs materials, taking advantage of the natural lattice match in this system. Currently, high performance GaAs-based HBTs have been reported and the InP-based transistors are still promising. In this paper we will review the reasons why this device has required more than forty years of development and what its future can be in the InP-based materials systems.

Paper Details

Date Published: 28 November 1989
PDF: 20 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962048
Show Author Affiliations
Jean-Luc Pelouard, North Carolina State University (United States)
Michael A. Littlejohn, North Carolina State University (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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