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Proceedings Paper

High Dynamic Range GaInAs MISFET Mixers
Author(s): K. W. Chang; E. J. Denlinger; P. D. Gardner
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Paper Abstract

The Ga0.47In0.53As (GaInAs) metal-insulator-semiconductor field-effect-transistor (MISFET) has a desirable combination of characteristics for passive, switch-type FET mixers. This paper describes the investigation of passive FET mixers using GaInAs MISFETs for microwave applications. At X-band, these mixers have dynamic range superior to their counterparts of active GaAs metal-semiconductor FET (MESFET) and diode mixers for the same LO input power level. Furthermore, one of the reported mixers can operate without any DC bias.

Paper Details

Date Published: 28 November 1989
PDF: 7 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962047
Show Author Affiliations
K. W. Chang, David Sarnoff Research Center (United States)
E. J. Denlinger, David Sarnoff Research Center (United States)
P. D. Gardner, David Sarnoff Research Center (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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