Share Email Print
cover

Proceedings Paper

MBE Grown A1GaAs/InP Mis System And Its Hetero-Mis Gate InP Fet's
Author(s): T. I toh; K. Asano; K. Kasahara; T. Ozawa; Y. Ando; K. Ohata
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper reports the characterization of AlGaAs layers grown directly on InP substrates by MBE and its MIS interfacial properties, and the fabrication and the performance of millimeter-wave InP FET's with an AlGaAs hetero-MIS gate structure and a selective ion-implantation channel. The hetero-MIS interface has been shown to have favorable properties for stable depletion-mode FET applications. The fabricated FET's with a recessed gate structure exhibited good and stable DC characteristics with high current and high breakdown voltage of over 30 V. The cut-off frequency of 25 GHz and the maximum stable power gain of 12 dB at 26 GHz were obtained for a hetero-MIS gate InP FET with gate length of 0.6 μm. Furthermore, at 38 GHz, a fabricated power FET with gate width of 420 μm exhibited maximum output power of 100 mW (0.25 W/mm), promising the use of these InP FET's for microwave and millimeter-wave power applications.

Paper Details

Date Published: 28 November 1989
PDF: 12 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962040
Show Author Affiliations
T. I toh, NEC Corporation (Japan)
K. Asano, NEC Corporation (Japan)
K. Kasahara, NEC Corporation (Japan)
T. Ozawa, NEC Corporation (Japan)
Y. Ando, NEC Corporation (Japan)
K. Ohata, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

© SPIE. Terms of Use
Back to Top