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Proceedings Paper

XPS, Auger And SEM Analysis Of The InP Surface After Closed-Ampoule Diffusion With Sulphur At Several Diffusion Temperatures
Author(s): Maria Faur; Mircea Faur; Manju Ghalla; Chandra Goradia; Douglas Jayne; Frank Honecy; Irving Weinberg
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Paper Abstract

In an attempt to identify the factors which limit the performance of InP solar cells made by the closed-ampoule diffusion of sulphur into p-type InP substrates, and in order to optimize the fabrication process, we have done a detailed analysis of the InP surface and of the diffused emitter region using XPS, Auger, SEM and EDAX for diffusion temperatures of 600, 625, 650, 675, 700 and 725°C for a fixed diffusion time of 3 hours, and diffusion times of 1, 2, 3, and 4 hours for a fixed temperature of 675°C. In this paper, we present the results of this analysis, showing how the morphology and chemical composition of the InP surface layer changes with the diffusion temperature and identifying the possible mechanisms which limit the photocurrent and the open circuit voltage of solar cells fabricated using the closed-ampoule diffusion process.

Paper Details

Date Published: 28 November 1989
PDF: 11 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962039
Show Author Affiliations
Maria Faur, Cleveland State University (United States)
Mircea Faur, Cleveland State University (United States)
Manju Ghalla, Cleveland State University (United States)
Chandra Goradia, Cleveland State University (United States)
Douglas Jayne, NASA Lewis Research Center (United States)
Frank Honecy, NASA Lewis Research Center (United States)
Irving Weinberg, NASA Lewis Research Center (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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