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Proceedings Paper

Inp Solar Cells On Silicon Substrates
Author(s): C. J. Keavney; S. M. Vernon; V. E. Haven; M. M. Al-Jassim
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Paper Abstract

This paper describes InP solar cells which were made by metalorganic chemical vapor deposition on GaAs-coated Si substrates. Various values of emitter thickness and doping levels were used for these cells. Air mass zero efficiencies of 7.1% were achieved with this material, and 9.4% with GaAs substrates. Various techniques have been developed for improving the material quality of GaAs-on-Si films, resulting in efficiencies as high as 18% AMO for heteroepitaxial GaAs cells; the efficiencies achievable if these can be successfully applied to InP are calculated.

Paper Details

Date Published: 28 November 1989
PDF: 13 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962038
Show Author Affiliations
C. J. Keavney, Spire Corporation (United States)
S. M. Vernon, Spire Corporation (United States)
V. E. Haven, Spire Corporation (United States)
M. M. Al-Jassim, Solar Energy Research Institute (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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