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Proceedings Paper

Epitaxial InP And Related III-V Compounds Applied To Solar Cells
Author(s): M. W. Wanlass; G. S. Horner; T. A. Gessert; T. J. Coutts; I. Weinberg
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Paper Abstract

The application of InP and related low-bandgap, III-V alloys grown by atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE) to photovoltaics is discussed. The work is presented in two parts: the first is aimed at increasing the performance of InP shallow-homojunction cells via improved emitter designs, and the second concerns the development of InP-related low-bandgap ternary and quaternary compounds, and fabrication of solar cells therein. The emitter design study focussed on the majority and minority carrier transport properties of S-doped InP epilayers. This study has resulted in InP shallow-homojunction cells exhibiting substantial improvements in blue response. However, compensating losses in open-circuit voltage and fill-factor prevented overall gains in cell conversion efficiency. The development of solar cells in epilayers of InAsyPi1-y, Ga0.47In0.53As and GaxIn1-xAsyP1-y as applied to tandem solar cells is also discussed. Low-bandgap cells with good performance have been fabricated and areas for futher improvement have been outlined.

Paper Details

Date Published: 28 November 1989
PDF: 14 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962034
Show Author Affiliations
M. W. Wanlass, Solar Energy Research Institute (United States)
G. S. Horner, Solar Energy Research Institute (United States)
T. A. Gessert, Solar Energy Research Institute (United States)
T. J. Coutts, Solar Energy Research Institute (United States)
I. Weinberg, NASA Lewis Research Center (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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