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Proceedings Paper

New LED In Synthesized InP Yb Material
Author(s): H. L'Haridon; D. Moutonnet; Y. Toudic; M. Salvi; P. N. Favennec
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Paper Abstract

New light emitting diodes at 1.00 μm obtained from synthesized InP : Yb bulk crystal are studied. The n-type Yb doped bulk material was grown by gradient freeze method. Mg+ ions were implanted in this material for p-type layer. The indepth localization of the junction is not critical. Photoluminescence and electroluminescence spectra are performed from 77 K to 300 K. Two peaks are observed : band edge emission (0.88 pm) and intra shell 4f-4f for Yb ions. The variation of EL intensity with diode forward current shows a Yb3+ emission about 40 times higher than band edge emission. No influence of temperature is observed on Yb3+ peak linewidth and wavelength.

Paper Details

Date Published: 28 November 1989
PDF: 6 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962031
Show Author Affiliations
H. L'Haridon, Centre National d'Etudes des Telecommunications (France)
D. Moutonnet, Centre National d'Etudes des Telecommunications (France)
Y. Toudic, Centre National d'Etudes des Telecommunications (France)
M. Salvi, Centre National d'Etudes des Telecommunications (France)
P. N. Favennec, Centre National d'Etudes des Telecommunications (France)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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