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Proceedings Paper

The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers
Author(s): K. D. Chik; B. A. Richardson
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Paper Abstract

The characteristics of carrier leakage and the effects of carrier leakage on the lasing threshold and its temperature dependence in 1.3μm wavelength GaInAsP/InP double heterojunction lasers have been calculated and compared with experimental results. The agreement between measured and theoretical results provides strong evidence that carrier leakage in such devices is related to the Auger recombination processes.

Paper Details

Date Published: 28 November 1989
PDF: 4 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962030
Show Author Affiliations
K. D. Chik, Bell-Northern Research (Canada)
B. A. Richardson, Bell-Northern Researd (Canada)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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