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Proceedings Paper

Sensitivity Of Optoelectronic Receivers
Author(s): C. R. Zeisse
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Paper Abstract

The formula used to predict wide-band noise of optoelectronic receivers has been modified to account for parasitic resistances in the transistor connected to the photodiode. The new formula leaves the total noise unchanged after proper steps have been taken to adjust the transistor gate width for minimum noise. The discrepancy between measured and predicted noise of 1.65 μm monolithic InP receivers thus remains largely unexplained.

Paper Details

Date Published: 28 November 1989
PDF: 12 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962029
Show Author Affiliations
C. R. Zeisse, Naval Ocean Systems Center (United States)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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