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Proceedings Paper

1.3 µm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate
Author(s): I. Ushijima; S. Osaka; A. Fukushima; T. Ohizumi; S. Nakai; K. Kihara; S. Isozumi; T. Shibata
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Paper Abstract

1.3 µm Flat-surface Buried Heterostructure (FBH) laser diode fabricated on a p-type substrate is reported. This laser exhibits a low threshold current and excellent lasing characteristics up to 120°C. For high temperature range operation, it is found that the active layer thickness plays an important role. Stable CW operation has been confirmed in 85°C 5 mW aging test.

Paper Details

Date Published: 28 November 1989
PDF: 6 pages
Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962028
Show Author Affiliations
I. Ushijima, Fujitsu Limited (Japan)
S. Osaka, Fujitsu Limited (Japan)
A. Fukushima, Fujitsu Limited (Japan)
T. Ohizumi, Fujitsu Limited (Japan)
S. Nakai, Fujitsu Limited (Japan)
K. Kihara, Fujitsu Limited (Japan)
S. Isozumi, Fujitsu Limited (Japan)
T. Shibata, Fujitsu Limited (Japan)


Published in SPIE Proceedings Vol. 1144:
1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices

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